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PRD1003 - 3,000A Dry Thermal Oxide
Dry thermal silicon dioxide (SiO2), 0.3um (3,000A) thick, grown on silicon wafers. Substrates are cleaned in our class 100 cleanroom before processing. This is a furnace process, so oxide is grown on both surfaces of the wafer. 100mm (4 inch) diameter wafers. Ships with a film Certificate of Conformance.
Need something different? Email sales@roguevalleymicro.com for a quote.
| -Material: Silicon |
| -Diameter: 100mm |
| -Type/Dopant: P/Boron |
| -Orientation: <100> |
| -Resistivity: >1 ohm-cm |
| -Thickness - W: 525+/-25um |
| -Surface Prep: SSP |
| -Flat/Notch: Flat, Semi Standard |
| -Film Type: Dry Thermal Oxide |
| -Film Thickness: 3,000A +/-5% |
| -Sides Processed: Both |
| -Quantity: 1 lot = 25 wafers |