PRD1007 - 6,000A LS LPCVD Nitride
Low-stress LPCVD silicon nitride, 0.6um (6,000A) thick, deposited on silicon wafers. The silicon-rich film composition keeps tensile stress low for thick-film and released-structure work. Substrates are cleaned in our class 100 cleanroom before processing. This is a furnace process, so nitride is deposited on both surfaces of the wafer. Film stress is less than 250 MPa tensile, with a refractive index of 2.20 +/- 0.05 at 632.8 nm. 100mm (4 inch) diameter wafers. Ships with a film Certificate of Conformance.
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| -Material: Silicon |
| -Diameter: 100mm |
| -Type/Dopant: P/Boron |
| -Orientation: <100> |
| -Resistivity: >1 ohm-cm |
| -Thickness - W: 525+/-25um |
| -Surface Prep: SSP |
| -Flat/Notch: Flat, Semi Standard |
| -Film Type: Low Stress LPCVD Nitride |
| -Film Stress: <250 MPa Tensile |
| -Film Thickness: 6,000A +/-5% |
| -Sides Processed: Both |
| -Quantity: 1 lot = 25 wafers |