PRD1027 - 2,000A Wet Thermal Oxide/2,000A Std LPCVD Nitride
2-layer film stack. Wet Thermal Oxide is grown followed by Stoichiometric LPCVD Nitride deposition. Substrates are cleaned prior to processing in our class 100 cleanroom to ensure a premiμm quality film. This is a furnace process so both surfaces of the wafers will have oxide. Stoichiometric LPCVD Nitride film stress =>800 MPa Tensile and Refractive Index 2.00 +/- 0.05 @ 632.8nm. Product to ship with film Certificate of Conformance. Need something different? Please email sales@roguevalleymicro.com for a quote.
| -Material: Silicon |
| -Diameter: 100mm |
| -Type/Dopant: P/Boron |
| -Orientation: <100> |
| -Resistivity: >1 ohm-cm |
| -Thickness - W: 525+/-25um |
| -Surface Prep: SSP |
| -Flat/Notch: Flat, Semi Standard |
| -Film Type: Wet Thermal Oxide, Stoichiometric LPCVD Nitride |
| -Film Thickness: 2,000A +/-5%, 2,000A +/-5% |
| -Film Stress: ≥800 MPa Tensile |
| -Sides Processed: Both |
| -Quantity: 1 lot = 25 wafers |