PRD1500 - 2,000A Stoichiometric LPCVD Nitride
Stoichiometric LPCVD silicon nitride (Si3N4), 0.2um (2,000A) thick, deposited on silicon wafers. Substrates are cleaned in our class 100 cleanroom before processing. This is a furnace process, so nitride is deposited on both surfaces of the wafer. Film stress is 800 MPa tensile or greater, with a refractive index of 2.00 +/- 0.05 at 632.8 nm. 150mm (6 inch) diameter wafers. Ships with a film Certificate of Conformance.
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| -Material: Silicon |
| -Diameter: 150mm |
| -Type/Dopant: P/Boron |
| -Orientation: <100> |
| -Resistivity: >1 ohm-cm |
| -Thickness - W: 675+/-25um |
| -Surface Prep: SSP |
| -Flat/Notch: Flat, Semi Standard |
| -Film Type: Stoichiometric LPCVD Nitride |
| -Film Stress: ≥800 MPa Tensile |
| -Film Thickness: 2,000A +/-5% |
| -Sides Processed: Both |
| -Quantity: 1 lot = 25 wafers |