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PRD2001 - 4um Wet Thermal Oxide
Wet thermal silicon dioxide (SiO2), 4um (40,000A) thick, grown on silicon wafers. Substrates are cleaned in our class 100 cleanroom before processing. This is a furnace process, so oxide is grown on both surfaces of the wafer. 200mm (8 inch) diameter wafers. Ships with a film Certificate of Conformance.
Need something different? Email sales@roguevalleymicro.com for a quote.
| -Material: Silicon |
| -Diameter: 200mm |
| -Type/Dopant: P/Boron |
| -Orientation: <100> |
| -Resistivity: >1 ohm-cm |
| -Thickness - W: 725+/-25um |
| -Surface Prep: SSP |
| -Flat/Notch: Notch, Semi-Standard |
| -Film Type: Wet Thermal Oxide |
| -Film Thickness: 4um +/-5% |
| -Sides Processed: Both |
| -Quantity: 1 lot = 25 wafers |