PRD2005 - 1.5um LS LPCVD Nitride 200MPa
Low Stress LPCVD Nitride deposited on silicon wafers. Processed in our class 100 cleanroom to ensure a premiμm quality film. This is a furnace process so both surfaces of the wafers will have Nitride. Low Stress LPCVD Nitride film stress <250MPa Tensile and Refractive Index 2.20 +/- 0.05nm @ 632.8nm. Product to ship with film Certificate of Conformance. Need something different? Please email sales@roguevalleymicro.com for a quote.
| -Material: Silicon |
| -Diameter: 200mm |
| -Type/Dopant: P/Boron |
| -Orientation: <100> |
| -Resistivity: >1 ohm-cm |
| -Thickness - W: 725+/-25um |
| -Surface Prep: DSP |
| -Flat/Notch: Notch, Semi-Standard |
| -Lasermark: Backside |
| -Film Type: Low Stress LPCVD Nitride |
| -Film Thickness: 1.5um +/-5% |
| -Film Stress: 200 MPa Tensile |
| -Sides Processed: Both |