PRD2005 - 1.5um LS LPCVD Nitride 200MPa
Low-stress LPCVD silicon nitride, 1.5um (15,000A) thick, deposited on silicon wafers. The silicon-rich film composition keeps tensile stress low for thick-film and released-structure work. Substrates are cleaned in our class 100 cleanroom before processing. This is a furnace process, so nitride is deposited on both surfaces of the wafer. Film stress is approximately 200 MPa tensile, with a refractive index of 2.20 +/- 0.05 at 632.8 nm. 200mm (8 inch) diameter wafers. Ships with a film Certificate of Conformance.
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| -Material: Silicon |
| -Diameter: 200mm |
| -Type/Dopant: P/Boron |
| -Orientation: <100> |
| -Resistivity: >1 ohm-cm |
| -Thickness - W: 725+/-25um |
| -Surface Prep: DSP |
| -Flat/Notch: Notch, Semi-Standard |
| -Lasermark: Backside |
| -Film Type: Low Stress LPCVD Nitride |
| -Film Thickness: 1.5um +/-5% |
| -Film Stress: 200 MPa Tensile |
| -Sides Processed: Both |