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PRD5000 - 1,000A Stoichiometric LPCVD Nitride

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Stoichiometric LPCVD silicon nitride (Si3N4), 0.1um (1,000A) thick, deposited on silicon wafers. Substrates are cleaned in our class 100 cleanroom before processing. This is a furnace process, so nitride is deposited on both surfaces of the wafer. Film stress is 800 MPa tensile or greater, with a refractive index of 2.00 +/- 0.05 at 632.8 nm. 50mm (2 inch) diameter wafers. Ships with a film Certificate of Conformance.

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$ 68.94 68.94 USD $ 68.94

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  • -Material
  • -Diameter
  • -Type/Dopant
  • -Orientation
  • -Resistivity
  • -Thickness - W
  • -Surface Prep
  • -Flat/Notch
  • -Film Type
  • -Film Stress
  • -Film Thickness
  • -Sides Processed
  • -Quantity

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-Material: Silicon
-Diameter: 50.8mm
-Type/Dopant: P/Boron
-Orientation: <100>
-Resistivity: >1 ohm-cm
-Thickness - W: 281um
-Surface Prep: SSP
-Flat/Notch: Flat, Semi Standard
-Film Type: Stoichiometric LPCVD Nitride
-Film Stress: ≥800 MPa Tensile
-Film Thickness: 1,000A +/-5%
-Sides Processed: Both
-Quantity: 1 lot = 25 wafers

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